- Silvaco (SVCO, Financial) collaborates with Fraunhofer ISIT to enhance GaN device technology.
- The partnership will leverage Silvaco's Power Devices Solution for Design Technology Co-Optimization (DTCO).
- This collaboration supports the EU Chips Act via the APECS pilot line initiative.
Silvaco Group, Inc. (SVCO) has entered into a strategic R&D partnership with the Fraunhofer Institute for Silicon Technology (ISIT) to accelerate development of next-generation Gallium Nitride (GaN) devices. This effort will harness Silvaco’s Power Devices Solution for Design Technology Co-Optimization (DTCO), critical for optimizing modern power electronics.
Fraunhofer ISIT will employ Silvaco’s top-tier design tools, including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™, to speed up prototyping during post-CMOS GaN and MEMS process development on 8-inch wafers. This partnership is significant as ISIT’s involvement in the APECS pilot line aligns with the European Union’s Chips Act initiative, reinforcing Europe’s semiconductor capabilities.
Moreover, the collaboration has a strong educational component. Students at local universities will receive training on Silvaco’s Victory TCAD™ platform, thereby preparing the next generation of semiconductor device engineers and expanding future market reach.
Eric Guichard, Ph.D., Senior Vice President and General Manager of Silvaco’s TCAD Division, expressed that this initiative marks a substantial advancement for strengthening Europe’s position in the semiconductor sector and propelling the global progression of GaN devices. Dr. Michael Mensing, Head of the Advanced Devices Group at Fraunhofer ISIT, emphasized the value of Silvaco’s TCAD solutions in optimizing GaN device performance efficiently.
This collaboration not only enhances Silvaco’s market presence in advanced GaN semiconductor design but also positions it strategically within the broader European semiconductor landscape.
