- Vishay Intertechnology's new SiEH4800EW MOSFET offers a 15% improvement in on-resistance compared to competitors.
- The device features a compact 8x8mm footprint, providing a 50% reduction in PCB space.
- Enhanced thermal performance with a low maximum RthJC of 0.36 °C/W improves efficiency in industrial applications.
Vishay Intertechnology, Inc. (VSH, Financial) has announced the launch of its latest 80 V TrenchFET® Gen IV n-channel power MOSFET, the SiEH4800EW, housed in the compact PowerPAK® 8x8SW bond wireless package. This cutting-edge device sets a new standard in the industry with a typical on-resistance of 0.88 m? at 10 V, delivering a 15% improvement over comparable products.
The SiEH4800EW is designed to enhance efficiency across a variety of industrial applications, including motor drive controls, power tools, welding equipment, and battery management systems. Its design improvements include a low maximum junction-to-case thermal resistance (RthJC) of 0.36 °C/W, offering an 18% reduction that facilitates superior heat dissipation and performance in high-temperature environments up to 175 °C.
With its space-saving 8mm x 8mm footprint and 1mm profile, the device reduces PCB space usage by 50% compared to the TO-263 package. The innovative use of a fused lead increases the source PAD solderable area to 3.35 mm², significantly decreasing current density and reducing the risk of electro-migration, which is critical for ensuring robust and reliable designs in high-current applications.
The MOSFET's wettable flanks also contribute to enhanced manufacturing reliability by facilitating improved solderability and easier visual inspection of solder joints. Samples and production quantities of the SiEH4800EW are available now, with typical lead times of 13 weeks.
