- SK hynix (HXSCL, Financial) unveils UFS 4.1 solution with 321-layer 1Tb 4D NAND for mobile applications.
- The new product offers 7% better power efficiency and is 15% thinner at 0.85mm.
- Volume shipments are expected to begin in Q1 2026, with 512GB and 1TB capacity options.
SK hynix Inc. (HXSCL) has announced the development of a groundbreaking UFS 4.1 solution featuring the world's highest 321-layer 1Tb triple-level cell 4D NAND flash, specifically designed for mobile applications. This state-of-the-art product is optimized for on-device AI, reflecting significant advancements in power efficiency and miniaturization.
The new solution delivers a 7% improvement in power efficiency compared to its predecessor and reduces its thickness by 15%, achieving a svelte 0.85mm, making it ideal for ultra-slim mobile devices. Performance enhancements are notable, with a sequential read speed of 4300MB/s and improved random read and write speeds by 15% and 40%, respectively.
SK hynix plans to secure customer qualification by 2025 and commence volume shipments in the first quarter of 2026. The UFS 4.1 solution will be available in 512GB and 1TB capacity options, aiming to meet the rising demand for high-performance, energy-efficient mobile components.
In addition to mobile applications, SK hynix intends to expand its 321-layer 4D NAND technology into the consumer and data center markets by developing corresponding SSDs within the year. This move underscores SK hynix's strategy to solidify its position as a leader in the AI memory sector.
